• Integrated Circuit
  • Transistor
  • Very-large-scale integration (VLSI) is the process of creating an integrated circuit (IC) by combining millions or billions of MOS transistors onto a single chip.
  • metal–oxide–semiconductor field-effect transistor (MOS transistor) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon
  • Field-effect transistor (FET)
  • Propagation delay

Memory

SRAM

  • A static random-access memory (SRAM)

  • it’s a integrated circuit

  • usually has a single access port (read/write)

  • has a fixed access time to any datum, though the time can vary depending on whether the memory is being read or written

  • The number of addressable locations is called the height

  • The number of bits stored in each location is called the width

  • Inputs:

    • Chip select
    • Address
    • Output enable: controls whether or not the datum selected by the Address is actually driven on the pins
    • Write enable
    • Data input (Din)
  • Outputs:

    • Data output (Dout)
  • Operation:

    • To initiate a read/write access, the Chip select signal must be made active
    • (read) The Output enable signal must be made active
      • the access time is specified as the delay from the time the Output enable is true and the Address lines are valid until the time the date is on the Data output lines
    • (write) The Write enable has to be active, and the Data input lines and Address lines has to be supplied
    • it cannot be build in the same way as a register file, because a giant mux would be impractical. instead, large memories are implemented with a shared output line, called a bit line, which multiple memory cells in the memory array can assert.
    • A three-state buffer has two inputs (data and enable) and a single output, which can be in one of three states: asserted, deasserted, or high-impedance
      • the out

Example

SRAM provides 4 million addressable locations, each storing 8 bits, thus it will have:

  • 22 address lines (since )
  • 8-bit data output line
  • 8-bit single data input line

Example

SRAM provides 2 million addressable locations, each storing 16 bits, thus it will have:

  • 21 address lines (since )
  • 16-bit data output line
  • 16-bit single data input line